A Fully Integrated Reconfigurable Multimode Class-F2,3 GaN Power Amplifier

Fully Integrated CMOS Power Amplifier

A fully integrated 2.45 GHz 0.25μm CMOS power amplifier

A fully integrated differential class-AB power amplifier has been designed in a 0.25um CMOS technology. It is intended for medium output power ranges such as Bluetooth class I, and has an operating frequency of 2.45GHz. By using two parallel output stages that can he switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output pow...

A Class E Power Amplifier with Low Voltage Stress

A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic. The output circuit is designed to shape the switch voltage of the class E amplifier and lower the voltage stress of the transistor. T...

WATT GAN HEMT POWER AMPLIFIER FOR LTE 5 Watt GaN HEMT Power Amplifier for LTE

This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is...

A fully reconfigurable photonic integrated signal processor

A fully reconfigurable photonic integrated signal processor Weilin Liu, Ming Li, Robert S. Guzzon, Erik J. Norberg, John S. Parker, Mingzhi Lu, Larry A. Coldren, and Jianping Yao* Microwave Photonics Research Laboratory, University of Ottawa, Ottawa, Ontario K1N 6N5, Canada Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93116...